WP28007025

WP28007025
25W, 28V
GaN HEMT Die

FEATURES

• Up to 7 GHz Operation
• 17.4 dB Typical Small Signal Gain @ 2.45 GHz
• 25 W Typical Psat@2.45GHz
• 28V Operation
• High Breakdown Voltage
• High Efficiency
• Reliability Monitoring Supporting

APPLICATIONS

• ISM-band Amplifiers
• C-band Amplifiers
• Broadband Amplifiers
• Base Station Communications
• Drone, UAV
• Satellite Communications
• Radar application

The WP28007025 is a 25W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for DC- 7GHz operation in a user-friendly device for high bandwidth applications. Gallium nitride (GaN) HEMT is a device optimized for ISM/C-band applications. GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater energy efficiency.