WP28010060

WP28010060
60W, 28V
GaN HEMT Die

FEATURES

http://ecurie8.org/?svavilja=t%C3%A9l%C3%A9charger-rencontre-avec-joe-black-vf&5e8=51 • Up to 10 GHz Operation
• 13.0 dB Typical Small Signal Gain @ 3.5 GHz
• 60 W Typical Psat @3.5GHz
• 28V Operation
• High Breakdown Voltage
• High Efficiency
• Reliability Monitoring Supporting

APPLICATIONS

http://altamarea.es/?agoniyavtrysax=tures-para-solteros-colombia&fc9=26 • U/VHF Amplifiers
• Broadband Amplifiers
• Base Station Communications
• Drone, UAV
• WiMAX, LTE, WCDMA, GSM
• WPT, V2X
• Radar application

The WP28010060 is a 60W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for X-band operation in a user-friendly device for highband width applications. Gallium nitride (GaN) HEMT is a device optimized for 5G. GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater energy efficiency.