WP28015015

WP28015015
15W, 28V
GaN HEMT Die

FEATURES

• Up to 15 GHz Operation
• 10.0 dB Typical Small Signal Gain @ 8.15 GHz
• 15 W Typical Psat@8.15GHz
• 28V Operation
• High Breakdown Voltage
• High Efficiency
• Reliability Monitoring Supporting

APPLICATIONS

• U/VHF Amplifiers
• Broadband Amplifiers
• Base Station Communications
• Drone, UAV
• WiMAX, LTE, WCDMA, GSM
• WPT, V2X
• Radar application

The WP28015015 is a 15W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for X-band operation in a user-friendly device for highband width applications. Gallium nitride (GaN) HEMT is a device optimized for 5G. GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater energy efficiency.