WP28020035

WP28020035
35W, 28V
GaN HEMT Die

FEATURES

• Up to 15 GHz Operation
• 10.0 dB Typical Small Signal Gain @ 8 GHz
• 35 W Typical Psat @8GHz
• 28V Operation
• High Breakdown Voltage
• High Efficiency
• Reliability Monitoring Supporting

APPLICATIONS

• ku-band Amplifiers
• Broadband Amplifiers
• Base Station Communications
• Drone, UAV
• Satellite Communications
• Radar application

The WP28020035 is a 35W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 16GHz operation in a user-friendly device for high bandwidth applications. Gallium nitride (GaN) HEMT is a device optimized for ku-band applications. GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater energy efficiency. In addition, we’re no EL Issue.