WP48005025

WP48005025
25W, 48V
GaN HEMT Die

FEATURES

• Up to 5 GHz Operation
• 12.5 dB Typical Small Signal Gain @ 3.5 GHz
• 25 W Typical Psat@3.5GHz
• 48V Operation
• High Breakdown Voltage
• High Efficiency
• Reliability Monitoring Supporting

APPLICATIONS

• U/VHF Amplifiers
• Broadband Amplifiers
• Base Station Communications
• Drone, UAV
• WiMAX, LTE, WCDMA, GSM
• WPT, V2X
• Radar application

The WP48005025 is a 25W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation in a user-friendly device for highband width applications. Gallium nitride (GaN) HEMT is a device optimized for 5G. GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater energy efficiency.