WP48010030

WP48010030
30W, 48V
GaN HEMT Die

FEATURES

• Up to 10 GHz Operation
• 10.0 dB Typical Small Signal Gain @ 8.15GHz
• 30 W Typical Psat@5.8GHz
• 48V Operation
• High Breakdown Voltage
• High Efficiency
• Reliability Monitoring Supporting

APPLICATIONS

• U/VHF Amplifiers
• Broadband Amplifiers
• Base Station Communications
• Drone, UAV
• WiMAX, LTE, WCDMA, GSM
• WPT, V2X
• Radar application

The WP48010030 is a 30W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for X-band operation in a user-friendly device for highband width applications. Gallium nitride (GaN) HEMT is a device optimized for 5G. GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater energy efficiency.