WP2816P0008MH

WP2816P0008MH
8W, 28~32V
GaN HEMT Matched Transistor

FEATURES

• Up to 18 GHz Operation
• 9.7dB Small Signal Gain at 16.0 GHz
• 8 W Typical Psat at 16GHz, VDD=32V
• 25.8 % Efficiency at Psat at 16 GHz, VDD=32V
• 28~32 V Operation

APPLICATIONS

• Broadband Amplifiers
• Satcom
• Test Instrumentation
• Radar application

Th WP2816P0008MH is a 8W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).