WP2816P0010MH

WP2816P0010MH
10W, 28~32V
GaN HEMT Matched Transistor

FEATURES

lucena conocer chico • Up to 18 GHz Operation
• 9.7dB Small Signal Gain at 16.0 GHz
• 10 W Typical Psat at 16GHz, VDD=32V
• 26.2 % Efficiency at Psat at 16 GHz, VDD=32V
• 28~32 V Operation

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APPLICATIONS

charmingly • Broadband Amplifiers
• Satcom
• Test Instrumentation
• Radar application

http://centenariodelibes.es/?zabota=sistema-de-citas-tradicional&410=f0 Th WP2816P0010MH is a 10W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).