WP281P43060MH

WP281P43060MH
60W, 28V
GaN HEMT Matched Transistor

FEATURES

•1.38 to 1.48 GHz Operation
•19.0 dB Small Signal Gain at 1.43 GHz
•60W Typical Psat
•65% Efficiency at Psat
•28V Operation

APPLICATIONS

•Broadband Amplifiers
•Cellular Infrastructure
•Test Instrumentation
•Radar application

Th WP281P43060MH is a 60W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).