WP285P55050MH

WP285P55050MH(S)
15W, 28V
GaN HEMT Matched Transistor

FEATURES

• 5.03 to 5.85GHz Operation
• 10.9 dB Small Signal Gain at 5.57 GHz
• 52.48 W Typical Psat (Pulse duty 10%)
• 46.5 % Drain Efficiency at Psat
• 28 V Operation

APPLICATIONS

• BroadbandAmplifiers
• Radio Link
• S A T C O M
• Radar application

The WP285P55050MH is a 50W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).