WP286P0020MH

WP288P0015MH(S)
15W, 28V
GaN HEMT Matched Transistor

FEATURES

• 7.9 to 8.4GHz Operation
• >10 dB Small Signal Gain at 8.15 GHz
• 15 W Typical Psat (Pulse duty 10%)
• 45 % Drain Efficiency at Psat (CW 16W)
• 28 V Operation

APPLICATIONS

• BroadbandAmplifiers
• Radio Link
• S A T C O M
• Radar application

The WP288P0015MH(S) is a 15W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).