WP286P20040MH

WP286P20040MH
40W, 28V
GaN HEMT Matched Transistor

FEATURES

• 5.7 to 6.7GHz Operation
• 10.85 dB Small Signal Gain at 6.2 GHz
• 48.95 W Typical Psat
• 38.4 % Drain Efficiency at Psat
• 28 V Operation

APPLICATIONS

• BroadbandAmplifiers
• Radio Link
• S A T C O M
• Radar application

The WP286P20040MH is a 40W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).