WP286P2020MH

WP286P2020MH
15W, 28V
GaN HEMT Matched Transistor

FEATURES

• 5.7 to 6.7GHz Operation
• 12.19 dB Small Signal Gain at 6.2 GHz
• 30.62 W Typical Psat
• 51.1 % Drain Efficiency at Psat
• 28 V Operation

APPLICATIONS

• BroadbandAmplifiers
• Radio Link
• S A T C O M
• Radar application

The WP286P2020MH is a 20W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).