WP286P25020MH(S)

WP286P25020MH(S)
20W, 28V
GaN HEMT Matched Transistor

FEATURES

•5.8 to 6.7GHz Operation
•11.6dB Small Signal Gain at 6.7GHz
•22W Typical Psat
•32 % Efficiency at Psat
•28V Operation

APPLICATIONS

•Broadband Amplifiers
•Cellular Infrastructure
•Test Instrumentation
•Radar application

Th WP286P25020MH(S) is a 20W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).