WP287P2015MH

WP287P2015MH
15W, 28V
GaN HEMT Matched Transistor

FEATURES

• 6.95 to 7.45GHz Operation
• 12.96 dB Small Signal Gain at 7.2 GHz
• 20.14 W Typical Psat
• 62 % Drain Efficiency at Psat
• 28 V Operation

APPLICATIONS

• BroadbandAmplifiers
• Radio Link
• S A T C O M
• Radar application

The WP287P2015MH is a 15W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).