WP287P2015MS(S)

WP287P2015MS(S)
15W, 28V
GaN HEMT Matched Transistor

FEATURES

• 6.95 to 7.45GHz Operation
• 13.17dB SmallSignal Gain at7.2GHz
• 18.8W Typical Psat at 7.2GHz
• 57.8% Drain Efficiency at 7.2GHz
• 28V Operation

APPLICATIONS

• BroadbandAmplifiers
• Radio Link
• SATCOM
• Radar application

The WP287P2015MS(S) is a 15W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).