WP288P0020MH(S)

WP288P0020MH(S)
20W, 28V
GaN HEMT Matched Transistor

FEATURES

• 7 . 9 to 8.4GHz Operation
• >10 dB Small Signal Gain at 8.15 GHz
• 20 WTypical Psat (Pulse duty 10%)
• 35 % Drain Efficiency at Psat (CW 16W)
• OIP3   49dBm @37dBm tone
• 28 V Operation

APPLICATIONS

• BroadbandAmplifiers
• Radio Link
• S A T C O M
• Radar application

Th WP288P0020MH(S) is a 20W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).