WP289P4020MH(S)

WP289P4020MH(S)
20W, 28V
GaN HEMT Matched Transistor

FEATURES

• 9 . 2 to 9 . 6GHzOperation
• >9.5 dB Small Signal Gain at 9 . 4GHz
• 42.8dBm Typical Psat
• 36 % Drain Efficiency at Psat
• 28 V Operation

APPLICATIONS

• BroadbandAmplifiers
• Radio Link
• S A T C O M
• Radar application

Th WP289P4020MH(S) is a 20W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).