WP289P4020MH(S)

WP289P4020MH(S)
20W, 28V
GaN HEMT Matched Transistor

FEATURES

http://bartonyina.es/?cirkach=chat-sexo-con-cam&561=0e • 9 . 2 to 9 . 6GHzOperation
• >9.5 dB Small Signal Gain at 9 . 4GHz
• 42.8dBm Typical Psat
• 36 % Drain Efficiency at Psat
• 28 V Operation

http://norkos.it/?gosydarstvo=donna-cerca-uomo-chieti&e8a=84

APPLICATIONS

http://claroscuroteatro.es/?kaminchuk=mujeres-solteras-30-a%C3%B1os&c60=52 • BroadbandAmplifiers
• Radio Link
• S A T C O M
• Radar application

Acaraú Th WP289P4020MH(S) is a 20W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).