WP481P06100MH

WP481P06100MH
100W, 48V
GaN HEMT Matched Transistor

FEATURES

• 1.03 to 1.09 GHz Operation
• 21.0 dB Small Signal Gain at 1.06 GHz
• 100 W Typical Psat
• 62 % Efficiency at Psat
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Radar application

Th WP481P06100MH is a 100W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).