WP481P06200MH

WP481P06200MH
200W, 48V
GaN HEMT Matched Transistor

FEATURES

• 1.03 to 1.09GHz Operation
• 17.8 dB Small Signal Gain at 1.06 GHz
• 260 W Typical Psat
• 58.5 % Drain Efficiency at Psat
• 48 V Operation

APPLICATIONS

• BroadbandAmplifiers
• Radio Link
• S A T C O M
• Radar application

The WP481P06200MH is a 200W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).