WP483P5200MH

WP483P5200MH
200W, 48V
GaN HEMT Matched Transistor

FEATURES

• 3.5 to 3.6GHz Operation
• 11.2 dB Small Signal Gain at 3.55 GHz
• 190 W Typical Psat at 3.55 GHz
• 57.3 % Efficiency at Psat at 3.55 GHz
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

Th WP483P5200MH is a 200W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).