WP485P55100MH

WP485P55100MH
100W, 48V
GaN HEMT Matched Transistor

FEATURES

• 5.3 to 5.8GHz Operation
• 9.6 dB Small Signal Gain at 5.55 GHz
• 107.15 W Typical Psat
• 41.3 % Drain Efficiency at Psat
• 48 V Operation

APPLICATIONS

• BroadbandAmplifiers
• Radio Link
• S A T C O M
• Radar application

The WP485P55100MH is a 100W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).