WP28015025UH(S)

WP28015025UH(S)
25W, 28V
GaN HEMT Unmatched Transistor

FEATURES

• Up to 10 GHz Operation
• 12.7 dB Typical Small Signal Gain @ 6.0 GHz
• 25 W Typical Psat@6.0GHz
• 28V Operation
• High Breakdown Voltage
• High Efficiency
• Reliability Monitoring Supporting

APPLICATIONS

• U/VHF Amplifiers
• C-band Amplifiers
• Broadband Amplifiers
• Base Station Communications
• Drone, UAV
• WiMAX, LTE, WCDMA, GSM
• WPT, V2X
• Radar application

The WP 28015025UH(S) is a 25W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
This GaN HEMT is a wideband transistor optimized for for C-band operation in a user -friendly device for high bandwidth applications.
Gallium nitridenitride (GaN) HEMT is a device optimized for 5G.
GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater  energy  efficiency.