WP28015030UH(S)

WP28015030UH(S)
30W, 28V
GaN HEMT Unmatched Transistor

FEATURES

• Up to 10 GHz Operation
• 11.7 dB Typical Small Signal Gain@6.0 GHz
• 30 W Typical Psat@6.0GHz
• 28V Operation
• High Breakdown Voltage
• High Efficiency
• Reliability Monitoring Supporting

APPLICATIONS

• U/VHF Amplifiers
• C-band Amplifiers
• Broadband Amplifiers
• Base Station Communications
• Drone, UAV
• WiMAX, LTE, WCDMA, GSM
• WPT, V2X
• Radar application

The WP28015030UH(S)is a 30W gallium nitride (GaN) High Electron Mobility Transistor(HEMT). This GaN HEMT is a wideband transistor optimized for C-band operation in a user-friendly device for high bandwidth applications. Galliumnitride(GaN) HEMT is a device optimized for 5G. GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater energy efficiency.