WP2806008UH(S)(S)

WP2806008UH(S)
8W, 28V
GaN HEMT Unmatched Transistor

FEATURES

•Up to 6GHz Operation
•14 dB Small Signal Gain at 4.7GHz
•11.7W Typical Psat.
•61% Efficiency at Psat.
•28V Operation

APPLICATIONS

•Broadband Amplifiers
•Cellular Infrastructure
•Test Instrumentation
•WiMAX, LTE, WCDMA, GSM
•Radar application

The WP2806008UH(S) is a 60W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).