WP2806025UH(S)

WP2806025UH(S)
25W, 28V
GaN HEMT Unmatched Transistor

FEATURES

•Up to 5GHz Operation
•17.4 dB Small Signal Gain at 2.45GHz
•45.4dBm Typical Psat.
•78.4% Efficiency at Psat.
•28V Operation

APPLICATIONS

•Broadband Amplifiers
•Cellular Infrastructure
•Test Instrumentation
•WiMAX, LTE, WCDMA, GSM
•Radar application

The WP2806025UH(S) is a 25W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).