WP284P5008US

WP284P5008US
8W, 28V
RF GaN Power Transistor

FEATURES

• Up to 6GHz Operation
• 14dB Small Signal Gain at 4.7GHz
• 11.7W Typical Psat at 4.7 GHz
• 61% Efficiency at Psat at 4.7 GHz
• 28V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP284P5008US is a 8W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).