WP284P5015UH(S)

WP284P5015UH(S)
15W, 28V
GaN HEMT Unmatched Transistor

FEATURES

• Up to 6GHz Operation
• 12.7dB Small Signal Gain at 4.6GHz
• 21.6W Typical Psat at 4.6 GHz
• 60.7% Efficiency at Psat at 4.5 GHz
• 28V Operation

APPLICATIONS

• U/VHF Amplifiers
• Broadband Amplifiers
• Base Station Communications
• Drone, UAV
• WiMAX, LTE, WCDMA, GSM
• WPT, V2X
• Radar application

The WP284P5015UH(S) is a 15W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
This GaN HEMT is a wideband transistor optimized for for X-band operation in a user -friendly device for high bandwidth applications.
Gallium nitridenitride (GaN) HEMT is a device optimized for 5G.
GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater  energy  efficiency.