WP285P1030UH(S)

WP285P1030UH(S)
30W, 28V
GaN HEMT Unmatched Transistor

FEATURES

• Up to 6 GHz Operation
• 12.9dB Small Signal Gain at 5.1 GHz
• 30.7W Typical Psat at 5.4 GHz
• 45 % Efficiency at 5.4 GHz
• 28 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP285P1030UH is a 30W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).