WP285P5020UH(S)

WP285P5020UH(S)
15W, 28V
GaN HEMT Unmatched Transistor

FEATURES

• 5 to 6GHz Operation
• 11.5 dB Small Signal Gain at 3.55 GHz
• 44.1 dBm Typical Psat at 5.5 GHz
• 39.3 % Efficiency at Psat at 5.5 GHz
• 28 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP285P5020UH(S) is a 20W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).