WP48007008UH(S)

WP48007008UH(S)
8W, 48V
GaN HEMT Unmatched Transistor

FEATURES

• Up to 8 GHz Operation
• 14.0 dB Typical Small Signal Gain @ 4.7GHz
• 8W Typical Psat@4.7GHz
• 48V Operation
• High Breakdown Voltage
• High Efficiency
• Reliability Monitoring Supporting

APPLICATIONS

• U/VHF Amplifiers
• 4.4-5.0GHz applications
• Base Station Communications
• Drone, UAV
• WiMAX, LTE, WCDMA, GSM
• WPT, V2X
• Radar application

The WP48007008UH(S) is a 8W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
This GaN HEMT is a wideband transistor optimized for 4.4-5.0GHz operation in a user-friendly device for highband width applications. Galliumnitride (GaN) HEMT is a device optimized for 5G.
GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater energy efficiency.