WP482P1020UH(S)

WP482P1020UH(S)
20W, 48V
GaN HEMT Unmatched Transistor

FEATURES

• Up to 3.5GHz Operation
• 20.8 dB Small Signal Gain at 2.14GHz
• 22.57W Typical P3dB
• 48.3% Efficiency at P3dB
• 48V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP482P1020UH(S) is a 15W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).