WP482P1026UH(S)

WP482P1026UH(S)
26W, 48V
GaN HEMT Unmatched Transistor

FEATURES

• Up to 3.5GHz Operation
• 19.2 dB Small Signal Gain at 2.14GHz
• 25.7W Typical P3dB at 2.14 GHz
• 56% Efficiency at P3dB at 2.14 GHz
• 48V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP482P1026US is a 26W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).