WP482P1140UH(S)

WP482P1140UH(S)
140W, 48V
RF GaN Power Transistor

FEATURES

• Up to 3.5GHz Operation
• 12.7dB Small Signal Gain at 2.14GHz
• 145W Typical Psat at 2.14 GHz
• 58.6% Efficiency at Psat at 2.14 GHz
• 48V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP482P1140UH(S) is a 140W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).