WP482P4130US_A400W-2

WP482P4130US_A400W-2
400W, 48V
RF GaN Power Transistor

(Using two transistors(WP482P4130US) in parallel)

FEATURES

• Up to 3.5GHz Operation
• 14.6dB Small Signal Gain at 2.45GHz
• 410 W Typical Psat at 2.45 GHz
PulseMode
• 65 % Efficiency at Psat at 2.45 GHz
Pulse Mode
• 280 W Typical Psat at 2.45 GHz
CW Mode
• 53% Efficiency at Psat at 2.45 GHz
CW Mode
• 48V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP482P4130US_A400W-2 is a 400W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).