WP482P45030UH_CW

WP482P45030UH_CW
30W, 48V
RF GaN Power Transistor

FEATURES

• Up to 3.5 GHz Operation
• 19.6 dB Small Signal Gain at 2.45 GHz
• 30.9 W Typical Psat at 2.45 GHz
CW Mode
• 63 % Efficiency at Psat at 2.45 GHz
CW Mode
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX , LTE, WCDMA, GSM
• Radar application

The WP482P45030UH_CW is a 30W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).