WP482P45110UH_CW

WP482P45110UH_CW
110W, 48V
GaN HEMT Unmatched Transistor

FEATURES

• Up to 3.5 GHz Operation
• 14.4 dB Small Signal Gain at 2.45 GHz
• 114 W Typical Psat at 2.45 GHz
CW Mode
• 53 % Efficiency at Psat at 2.45 GHz
CW Mode
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX , LTE, WCDMA, GSM
• Radar application

Th WP482P45110UH_CW is a 110W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).