WP482P45130UH(S)

WP482P45130UH(S)
130W, 48V
RF GaN Power Transistor

FEATURES

• Up to 3.5 GHz Operation
• 15.4 dB Small Signal Gain at 2.45 GHz
• 147 W Typical Psat at 2.45 GHz
• 69 % Efficiency at Psat at 2.45 GHz
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP482P45130UH(S) is a 130W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).