WP482P45300UH

WP482P45300UH
300W, 48V
RF GaN Power Transistor

FEATURES

• Up to 4GHz Operation
• 15.0dB Small Signal Gain at 2.45GHz
• 323W Typical Psat at 2.45 GHz
• 59% Efficiency at Psat at 2.45 GHz
• 48V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP482P45300UH is a 300W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).