WP482P9025US

WP482P9025US
25W, 48V
GaN HEMT Unmatched Transistor

FEATURES

• Up to 5GHz Operation
• 13.7 dB Small Signal Gain at 2.9GHz
• 29W Typical P3dB
• 56% Efficiency at P3dB
• 48V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP482P9025US is a 25W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).