WP483P3100UH

WP483P3100UH
100W, 48V
RF GaN Power Transistor

FEATURES

• Up to 4 GHz Operation
• 12.0 dB Small Signal Gain at 3.3 GHz
• 50.8 dBm Typical Psat at 3.3 GHz
• 58.8 % Efficiency at Psat at 3.3 GHz
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP483P3100UH is a 100W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).