WP483P5130UH(S)

WP483P5130UH(S)
130W RF GaN Power Transistor

FEATURES

• Up to 3.5GHz Operation
• 14.6dB Small Signal Gain at 3.55GHz
• 141W Typical Psat at 3.55 GHz
• 65% Efficiency at Psat at 3.55 GHz
• 48V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP483P5130UH(S) is a 130W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).