WP483P5200UH(S)

WP483P5200UH(S)
200W RF GaN Power Transistor

FEATURES

• Up to 3.5GHz Operation
• 11.7dB Small Signal Gain at 3.55GHz
• 195W Typical Psat at 3.55 GHz
• 53.5% Efficiency at Psat at 3.55 GHz
• 48V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP483P5200UH is a 200W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).