WP483P5400US Ver1

WP483P5400US Ver1
400W RF GaN Power Transistor

FEATURES

• Up to 3.5GHz Operation
• 10.9dB Small Signal Gain at 3.55GHz
• 407W Typical Psat at 3.5GHz
• 55% Efficiency at Psat at 3.55 GHz
• 48V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP483P5400US Ver1 is a 400W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).