WP483P6050UH_Ver1

WP483P6050UH_Ver1
50W RF GaN Power Transistor

FEATURES

• Up to 4 GHz Operation
• 14.04dB Small Signal Gain at 3.6 GHz
• 48dBm Typical Psat at 3.8 GHz
• 57.9 % Efficiency at Psat at 3.8 GHz
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP483P6050UH_Ver1 is a 50W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).