WP483P6050UH_Ver2

WP483P6050UH_Ver2
50W RF GaN Power Transistor

FEATURES

• Up to 4 GHz Operation
• 12.67dB Small Signal Gain at 3.6 GHz
• 48.85dBm Typical Psat at 3.8 GHz
• 54.94 % Efficiency at Psat at 3.8 GHz
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP483P6050UH_Ver2 is a 50W gallium nitride (GaN) High Electron Mobility Transistor (HEMT).