WP483P6130UH

WP483P6130UH
130W RF GaN Power Transistor

FEATURES

• Up to 5.0 GHz Operation
• 10.4 dB Small Signal Gain at 3.55 GHz
• 52 dBmTypical Psat at 3.55 GHz
• 56 % Efficiency at Psat at 3.55 GHz
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP483P6130UH is a 130W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).