WP483P6130UH

http://dosiper.com/?derime=quart-como-conocer-gente&cc1=0b WP483P6130UH
130W RF GaN Power Transistor

FEATURES

http://ascomfidibrescia.it/?otvratitelno=sesso-incontri-a-andora&bfb=a2 • Up to 5.0 GHz Operation
• 10.4 dB Small Signal Gain at 3.55 GHz
• 52 dBmTypical Psat at 3.55 GHz
• 56 % Efficiency at Psat at 3.55 GHz
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP483P6130UH is a 130W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).