WP483P7100UH

WP483P7100UH
100W RF GaN Power Transistor

FEATURES

• Up to 3.7 GHz Operation
• 11.5 dB Small Signal Gain at 3.55 GHz
• 50dBm Typical Psat at 3.55 GHz
• 54 % Efficiency at Psat at 3.55 GHz
• 48 V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP483P7100UH is a 100W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).