WP484P7045UH(S)

WP484P7045UH(S)
45W RF GaN Power Transistor

FEATURES

• Up to 6GHz Operation
• 14.5dB Small Signal Gain at 4.7GHz
• 47W Typical P3dB at 4.7 GHz
• 51% Efficiency at P3dB at 4.7 GHz
• 48V Operation

APPLICATIONS

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application

The WP484P7045UH(S) is a 45W gallium nitride (GaN) High Electron Mobility Transistor(HEMT).